Structural Effects of Electrode Proximity in Vacuum?Deposited Organic Semiconductors Studied by Microfocused X?Ray Scattering

نویسندگان

چکیده

Organic semiconductors have seen widespread application in thin-film devices, such as organic field-effect transistors (OFETs), whose performance is closely linked to the molecular-level microstructure and crystalline orientation. In actual OFETs, varies significantly based on local environment, for example, proximity of contact electrodes. This account highlights recent examples where microfocused grazing-incidence wide-angle X-ray scattering (?GIWAXS) maps structural information between OFET Also shown are results ?GIWAXS used study naphthyl end-capped oligothiophenes across interdigitated electrode arrays a bottom-contact identifying lateral effects electrodes terms misorientation, crystallite size, disorder. The together with those highlighted, classify essential parameters demonstrate capabilities X-rays map microstructures devices. ideas presented herein bring us toward guidelines understanding device molecular semiconductors. It also believed that they readily expanded from OFETs other devices small molecules polymers materials.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Structural characterization of ionic gelator studied by dynamic light scattering and small-angle neutron scattering.

Structural characterization of a hydrogel consisting of an oligomeric electrolyte, poly[pyridinium-1,4-diyliminocarbonyl-1,4-phenylenemethylene chloride] (1-Cl) as an ionic gelator was carried out by static and dynamic light scattering (SLS/DLS) and small-angle neutron scattering (SANS) techniques. All the measurements were performed by changing the concentration and temperature. We have succes...

متن کامل

Organic Semiconductors

History With the invention of the transistor around the middle of the last century, inorganic semiconductors such as Si or Ge began to take over the role as the dominant material in electronics from the previously dominant metals. At the same time, the replacement of vacuum tube based electronics by solid state devices initiated a development which by the end of the 20th century has lead to the...

متن کامل

Effects of polymorphism on charge transport in organic semiconductors

Oana D. Jurchescu,1,2,*,† Devin A. Mourey,2 Sankar Subramanian,3 Sean R. Parkin,3 Brandon M. Vogel,4 John E. Anthony,3 Thomas N. Jackson,2 and David J. Gundlach1,*,‡ 1Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA 2Department of Electrical Engineering, Center for Thin Film Devices and Materials Research Institute, Pennsylvan...

متن کامل

Dynamic ferromagnetic proximity effect in photoexcited semiconductors.

The spin dynamics of photoexcited carriers in semiconductors in contact with a ferromagnet is treated theoretically and compared with time-dependent Faraday rotation experiments. The long-time response of the system is found to be governed by the first tens of picoseconds in which the excited plasma interacts strongly with the intrinsic interface between the semiconductor and the ferromagnet in...

متن کامل

synthesis of 3-aryl-2h-benzo[b]-1,4-oxazines in [omim]bf4 and reduction of organic compounds in methylimidazolium formate

در این پروژه ترکیبات 3-آریل-2h-بنزو[b]-4،1-اکسازین ها از مواد اولیه تجاری مشتقات دو آمینو فنول و ?-هالو کتون های آروماتیک در مایع یونی 1-اکتیل-3-متیل ایمیدازولیوم تترا فلورو بورات([omim]bf4) سنتز شده است. این واکنش توسط باز پتاسیم کربنات محلول از طریق o-آلکیلاسیون و سپس یک واکنش آمیداسیون درون مولکولی خود بخود در مدت زمان کوتاه انجام می شود. ترکیبات 4،1-بنزوکسازین به این روش با بهره خوب تا آلی ...

15 صفحه اول

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Advanced Engineering Materials

سال: 2021

ISSN: ['1527-2648', '1438-1656']

DOI: https://doi.org/10.1002/adem.202100082